DMT6009LSS - Diodes Incorporated

DMT6009LSS
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
NEW PRODUCT
ADVANCE INFORMATION
60V
Features and Benefits
RDS(ON) max
ID max
TA = +25°C
9.5mΩ @ VGS = 10V
10.8A
12mΩ @ VGS = 4.5V
9.6




100% Unclamped Inductive Switch (UIS) Test in Production
High Conversion Efficiency
Low RDS(ON) – Ensures On State Losses Are Minimized
Excellent Qgd x RDS(ON) Product (FOM)



Advanced Technology for DC-DC Converters
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
Mechanical Data
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,

Case: SO-8

Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
making it ideal for high-efficiency power management applications.

Power Management Functions

DC-DC Converters

Backlighting

D
SO-8
S
D
S
D
S
D
G
D
G
S
Top View
Internal Schematic
Top View
Equivalent circuit
Ordering Information (Note 4)
Part Number
DMT6009LSS-13
Notes:
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
= Manufacturer’s Marking
T6009LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 15 = 2015)
WW = Week (01 to 53)
T6009LS
YY WW
1
DMT6009LSS
Document number: DS38289 Rev. 1 - 2
4
1 of 6
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October 2015
© Diodes Incorporated
DMT6009LSS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
NEW PRODUCT
ADVANCE INFORMATION
Steady
State
Continuous Drain Current (Note 6) VGS = 10V
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Value
60
±20
10.8
8.6
ID
A
14.4
11.5
3
60
25
31.5
A
A
A
mJ
Value
1.25
100
55.5
1.6
75
42
12
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
ID
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.1mH
Avalanche Energy, L = 0.1mH
Units
V
V
IS
IDM
IAS
EAS
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
t<10s
RJA
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
PD
Steady State
t<10s
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
RJA
RJC
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
60
-
-
1
±100
V
μA
nA
VGS = 0V, ID = 250μA
VDS = 48V, VGS = 0V
VGS = ±16V, VDS = 0V
VGS(TH)
RDS (ON)
VSD
7.2
9
0.9
2
9.5
12
1.2
V
Static Drain-Source On-Resistance
0.7
-
VDS = VGS, ID = 250μA
VGS = 10V, ID = 13.5A
VGS = 4.5V, ID = 11.5A
VGS = 0V, IS = 20A
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
-
1,925
438
41
1.7
33.5
15.6
4.7
5.3
4.5
8.6
35.9
15.7
18.2
33.1
-
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
mΩ
V
Test Condition
pF
VDS = 30V, VGS = 0V,
f = 1MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
nC
VDS = 30V, ID = 13.5A
ns
VDD = 30V, VGS = 10V,
RG = 6Ω, ID = 13.5A
ns
nC
IF = 13.5A, di/dt = 400A/μs
5. Device mounted on FR-4 substrate PC board, 2oz. copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz. copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMT6009LSS
Document number: DS38289 Rev. 1 - 2
2 of 6
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October 2015
© Diodes Incorporated
DMT6009LSS
30.0
30
VDS = 5V
25
VGS = 4.5V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
25.0
VGS = 4.0V
20.0
VGS = 3.5V
15.0
VGS = 3.0V
10.0
5.0
20
15
125oC
25oC
150oC
5
VGS = 2.5V
-55oC
0
0
0.5
1
1.5
2
2.5
3
1
0.01
0.0095
0.009
VGS = 4.5V
0.0085
0.008
0.0075
0.007
VGS = 10V
0.0065
0.006
2
6
10
14
18
22
26
30
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
85oC
10
0.0
1.5
2
2.5
3
3.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.08
0.06
0.04
ID = 13.5A
0.02
0
0
4
VGS = 10V
0.013
0.012
175oC
150oC
0.011
125oC
0.01
0.009
85oC
0.008
0.007
25oC
0.006
-55oC
0.005
8
12
16
20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
0.014
4
0.1
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
NEW PRODUCT
ADVANCE INFORMATION
VGS = 10.0V
1.8
1.6
VGS = 4.5V, ID = 11.5A
1.4
1.2
1
0.8
0.6
0.004
0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
DMT6009LSS
Document number: DS38289 Rev. 1 - 2
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-50
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (℃)
150
Figure 6. On-Resistance Variation with Junction
Temperature
October 2015
© Diodes Incorporated
2
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.02
0.016
0.012
0.008
VGS = 10V, ID = 13.5A
0.004
0
-50
-25
0
25
50
75
100
125
150
1.6
ID = 1mA
1.2
ID = 250µA
0.8
0.4
-50
-25
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (℃)
10000
VGS = 0V
CT, JUNCTION CAPACITANCE (pF)
IS, SOURCE CURRENT (A)
0
Figure 8. Gate Threshold Variation vs. Junction
Temperature
30
25
20
TJ = 125oC
15
10
TJ = 85oC
TJ = 25oC
TJ = 150oC
5
TJ = -55oC
f=1MHz
Ciss
1000
Coss
100
Crss
10
0
0
0.3
0.6
0.9
1.2
0
1.5
5
10
15
20
25
30
VDS, DRAIN-SOURCE VOLTAGE (V)
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 10. Typical Junction Capacitance
Figure 9. Diode Forward Voltage vs. Current
100
10
PW =100µs
RDS(ON) Limited
ID, DRAIN CURRENT (A)
8
VGS (V)
NEW PRODUCT
ADVANCE INFORMATION
DMT6009LSS
6
4
VDS = 30V, ID = 13.5A
10
1
0
7
14
21
28
35
0.1
0.01
0.01
Qg (nC)
Figure 11. Gate Charge
DMT6009LSS
Document number: DS38289 Rev. 1 - 2
PW =10ms
PW =100ms
PW =1s
2
0
PW =1ms
TJ(Max) = 150℃ TC = 25℃
Single Pulse
DUT on 1*MRP Board
VGS= 10V
0.1
1
PW =10s
DC
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
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DMT6009LSS
r(t), TRANSIENT THERMAL RESISTANCE
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
RθJA(t) = r(t) * RθJA
RθJA = 98℃/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version
0.254
NEW PRODUCT
ADVANCE INFORMATION
1
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
7°~9°
h
45°
Detail ‘A’
A2 A A3
b
e
D
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
0°
8°

All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Dimensions
X
Y
C1
C2
C1
Value (in mm)
0.60
1.55
5.4
1.27
C2
Y
DMT6009LSS
Document number: DS38289 Rev. 1 - 2
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© Diodes Incorporated
DMT6009LSS
IMPORTANT NOTICE
NEW PRODUCT
ADVANCE INFORMATION
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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DMT6009LSS
Document number: DS38289 Rev. 1 - 2
6 of 6
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October 2015
© Diodes Incorporated